DocumentCode
2227587
Title
Application of high power silicon carbide transistors at radar frequencies
Author
Morse, A.W. ; Esker, P.M. ; Clarke, R.C. ; Brandt, C.D. ; Siergiej, R.R. ; Agarwal, A.K.
Author_Institution
Electron. Sensors & Syst. Div., Northrop Grumman Corp., Baltimore, MD, USA
Volume
2
fYear
1996
fDate
17-21 June 1996
Firstpage
677
Abstract
Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to allow greatly improved transistor performance over common semiconductors such as silicon and gallium arsenide. This paper describes the characteristics of recently fabricated devices in silicon carbide, and the first application of silicon carbide transistors in high power pulsed amplifiers at radar frequencies.
Keywords
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; SHF; SiC; UHF; high power pulsed amplifiers; high power transistors; radar frequencies; semiconductor material; Conducting materials; Dielectric breakdown; Frequency; Gallium arsenide; Pulse amplifiers; Radar applications; Semiconductor materials; Silicon carbide; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.511030
Filename
511030
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