• DocumentCode
    2227937
  • Title

    Observation of coherent acoustic phonon lasing in InGaN/GaN MQWs

  • Author

    Yue-Kai Huang ; Gia-Wei Chern ; Chi-Kuang Sun ; Keller, S. ; DenBaars, S.P.

  • Author_Institution
    Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    197
  • Lastpage
    198
  • Abstract
    Summary form only given. We present the observation of coherent acoustic phonon lasing behavior in InGaN/GaN MQWs. InGaN/GaN MQWs behaved as a phononic-crystal distributed-feedback cavity, thus only the specific phonon modes with wavelengths matching the MQW period width could be selected for coherent output. By using femtosecond ultraviolet pulses as pumping sources, coherent acoustic phonon amplification with over-10 dB acoustic gain was measured. When the induced acoustic gain is higher than the acoustic loss due to its acoustic traveling nature, a clear laser-like threshold behavior was observed.
  • Keywords
    III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; phonons; semiconductor quantum wells; InGaN-GaN; InGaN/GaN MQWs; MQW period width; acoustic gain; acoustic traveling nature; coherent acoustic phonon amplification; coherent acoustic phonon lasing; coherent output; femtosecond ultraviolet pulses; laser-like threshold behavior; phononic-crystal distributed-feedback cavity; specific phonon modes; Gallium compounds; Indium compounds; Phonons; Quantum wells; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    1-55752-708-3
  • Type

    conf

  • DOI
    10.1109/QELS.2002.1031304
  • Filename
    1031304