DocumentCode
2227937
Title
Observation of coherent acoustic phonon lasing in InGaN/GaN MQWs
Author
Yue-Kai Huang ; Gia-Wei Chern ; Chi-Kuang Sun ; Keller, S. ; DenBaars, S.P.
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2002
fDate
19-24 May 2002
Firstpage
197
Lastpage
198
Abstract
Summary form only given. We present the observation of coherent acoustic phonon lasing behavior in InGaN/GaN MQWs. InGaN/GaN MQWs behaved as a phononic-crystal distributed-feedback cavity, thus only the specific phonon modes with wavelengths matching the MQW period width could be selected for coherent output. By using femtosecond ultraviolet pulses as pumping sources, coherent acoustic phonon amplification with over-10 dB acoustic gain was measured. When the induced acoustic gain is higher than the acoustic loss due to its acoustic traveling nature, a clear laser-like threshold behavior was observed.
Keywords
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; phonons; semiconductor quantum wells; InGaN-GaN; InGaN/GaN MQWs; MQW period width; acoustic gain; acoustic traveling nature; coherent acoustic phonon amplification; coherent acoustic phonon lasing; coherent output; femtosecond ultraviolet pulses; laser-like threshold behavior; phononic-crystal distributed-feedback cavity; specific phonon modes; Gallium compounds; Indium compounds; Phonons; Quantum wells; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031304
Filename
1031304
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