Parameter extraction of BSIM based on S3 theory

We develop a novel algorithm for parameter extraction of semiconductor devices. The S³ algorithm, which is functional for NP-hard problems in discrete space, is applied to the parameter extraction of BSIM (Berkeley Short-channel IGFET Model). By using this algorithm, a relatively large number of model parameters can be optimized globally and extracted simultaneously. As to BSIM1, two distinct S³ smoothing strategies, accompanied by the LS-NR method, are used to extract the parameters. In contrast to the results obtained by using the LS-NR method alone, those derived after the introduction of these strategies are improved greatly