Resistive switching characteristics in printed Cu/CuO/(AgO)/Ag memristors

Author

Zou, Shichang ; Xu, Peng ; Hamilton, Michael C.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA

Volume

49

Issue

13

fYear

2013

fDate

June 20 2013

Firstpage

829

Lastpage

830

Abstract

A resistive switching behaviour of printed, flexible Cu/CuO/(AgO)/Ag memristor devices is demonstrated for the first time. It is suggested that the high resistance state and low resistance state of bipolar resistive switching behaviour are governed by the migration of oxygen between the copper oxide and silver oxide layers. The devices have characteristics of inexpensive low-temperature fabrication, low-power operation and no required electroforming process. Ink-jet printing was used to fabricate the devices on polymer substrates. Since these devices are fabricated on flexible polyimide, they have compatibility with flexible electronic technologies.

Keywords

MIM devices; copper; copper compounds; cryogenic electronics; electric resistance; flexible electronics; ink jet printing; low-power electronics; memristors; silver; silver compounds; Cu-CuO-AgO-Ag; HRS; LRS; bipolar resistive switching behaviour; copper oxide layers; device fabrication; flexible electronic technologies; flexible polyimide; high resistance state; ink jet printing; low resistance state; low-power operation; low-temperature fabrication; oxygen migration; polymer substrates; printed flexible memristor devices; resistive switching characteristics; silver oxide layers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.1302

Filename

6553043