Metal-semiconductor-metal photodetectors on intermediate temperature MBE grown GaAs for lightwave/millimeter-wave applications

Author

Paolella, A. ; Tait, G. ; Cooke, P. ; Nabet, B. ; Tousley, B.

Author_Institution

Res. Dev. & Eng. Center, US Army CECOM, Fort Monmouth, NJ, USA

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

915

Abstract

Intermediate growth temperature (IGT) GaAs Metal-Semiconductor-Metal (MSM) photodetectors enable an optimal combination of large dynamic range and speed. In addition these devices are suitable for monolithic integration. The static and temporal response of GaAs MSMs grown by Molecular Beam Epitaxy (MBE) at 350/spl deg/C has been measured.

Keywords

III-V semiconductors; gallium arsenide; metal-semiconductor-metal structures; millimetre wave detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; 350 C; GaAs; MBE; dynamic range; intermediate growth temperature; lightwave applications; metal-semiconductor-metal photodetector; millimeter-wave applications; monolithic integration; speed; static response; temporal response; Dark current; Dynamic range; Gallium arsenide; High speed optical techniques; Microwave devices; Molecular beam epitaxial growth; Optical sensors; Photodetectors; Temperature distribution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511087

Filename

511087