• DocumentCode
    2229851
  • Title

    Strain-induced self-rolling of semiconductor membranes: Effect of geometry, energetics, and kinetics

  • Author

    Chun, Ik Su ; Challa, Archana ; Derickson, Brad ; Hsia, K. Jimmy ; Li, Xiuling

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Semiconductor micro- and nanotubes can be formed by strain-induced self-rolling of membranes. The geometry effect on the final rolling direction of InxGa1-xAs-GaAs membranes are systematically studied both experimentally and by the finite element method.
  • Keywords
    III-V semiconductors; deformation; finite element analysis; gallium arsenide; indium compounds; membranes; nanofabrication; nanophotonics; rolling; semiconductor nanotubes; InxGa1-xAs-GaAs; finite element method; geometry effect; rolling direction; semiconductor membranes; semiconductor microtubes; semiconductor nanotubes; strain-induced self-rolling; Electron tubes; Epitaxial growth; Etching; Finite element methods; Geometry; Nanotubes; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2229851