DocumentCode
2230874
Title
High-speed silicon electro-optical modulator that can be operated in carrier depletion or carrier injection mode
Author
Spector, S.J. ; Geis, M.W. ; Grein, M.E. ; Schulein, R.T. ; Yoon, J.U. ; Lennon, D.M. ; Gan, F. ; Zhou, G.-R. ; Kaertner, F.X. ; Lyszczarz, T.M.
Author_Institution
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
A high-speed silicon optical modulator has been demonstrated which can operate either in forward bias using carrier injection, or in reverse bias using carrier depletion. In forward bias, the device requires less than 10 mW of drive power, but has a low bandwidth of 100 MHz. In reverse bias, the device has a nearly flat response to 18 GHz, but requires 700 mW for large modulation depths.
Keywords
electro-optical modulation; high-speed optical techniques; silicon; Si; carrier depletion; carrier injection mode; forward bias; high-speed optical techniques; reverse bias; silicon electro-optical modulator; Diodes; Electrooptic modulators; High speed optical techniques; Optical devices; Optical interferometry; Optical modulation; Optical resonators; Optical sensors; Optical waveguides; Silicon;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571232
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