Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology

Author

Li, Xuedong ; Chen, Qiang ; Sun, Yucheng ; Zhou, Yuanyuan ; Zhu, Jiliang ; Xiao, Dingquan ; Zhu, Jianguo

Author_Institution

Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China

fYear

2009

fDate

23-27 Aug. 2009

Firstpage

1

Lastpage

3

Abstract

0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃(PSTT5) thin films were prepared on LaNiO₃(LNO)/SiO₂/Si substrate by RF sputtering technology. After sputtering, the PSTT5 thin films were annealed by normal one-step rapid thermal annealing (OSRTA) or a renovation of two-step rapid thermal annealing (TSRTA). The PSTT5 films annealed by TSA show high (100) orientation, high phase purity, sufficient crystallization and enhanced ferroelectric properties. The TSRTA mechanism was also discussed.

Keywords

crystallisation; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; rapid thermal annealing; relaxor ferroelectrics; sputter deposition; LaNiO₃-SiO₂-Si; LaNiO₃-SiO₂-Si substrate; Pb(Sc_0.5Ta_0.5)O₃-PbTiO₃; RF sputtering technology; Si; crystallization; enhanced ferroelectric property; ferroelectric hysteresis loops; high (100) oriented PSTT5 thin film preparation; one-step rapid thermal annealing; phase purity; remnant polarization; two-step rapid thermal annealing; Crystallization; Ferroelectric films; Ferroelectric materials; Powders; Radio frequency; Rapid thermal annealing; Semiconductor thin films; Sputtering; Substrates; Temperature; PSTT; ferroelectric; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the

Conference_Location

Xian

ISSN

1099-4734

Print_ISBN

978-1-4244-4970-5

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2009.5307577

Filename

5307577