Reliability Evaluation of 0.1 μm AlSb/InAs HEMT Low Noise Amplifiers for Ultralow-Power Applications

Author

Chou, Yeong Chang ; Leung, D.L. ; Luo, W.B. ; Yang, J.M. ; Lin, C.H. ; Lange, M.D. ; Kan, Q.W. ; Farkas, D.S. ; Boos, J.B. ; Bennett, B.R. ; Gutierrez, A.L. ; Eng, D.C. ; Wojtowicz, M. ; Oki, A. ; Block, T.

Author_Institution

Northrop Grumman Corp., Redondo Beach

fYear

2007

fDate

14-14 Oct. 2007

Firstpage

43

Lastpage

46

Abstract

Three-temperature lifetesting was performed to evaluate the reliability performance of 0.1 μm AlSb/InAs HEMT low noise amplifiers (LNAs) for ultralow-power applications. For the first time, the reliability performance of 0.1 μm AISb/lnAs HEMT LNAs was demonstrated. The results show a median time to failure of approximately 2x10⁶ hours at T_junction of 85°C with activation energy of 1.5 eV. High-reliability performance is essential for successful insertion of 0.1 μm AISb/lnAs HEMT LNAs for military and space applications with ultralow-power requirements.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MMIC; indium compounds; integrated circuit reliability; life testing; low noise amplifiers; AlSb-InAs; AlSb-InAs - Interface; HEMT low noise amplifiers; electron volt energy 1.5 eV; reliability performance; size 0.1 μm; temperature 85 °C; three-temperature life testing; time to failure; ultralow-power electronics; Electron mobility; HEMTs; Indium compounds; Low-noise amplifiers; Molecular beam epitaxial growth; Performance evaluation; Plasma temperature; Power dissipation; Scanning electron microscopy; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2007.[Reliability of Compound Semiconductors Digest]

Conference_Location

Portland, OR

Print_ISBN

978-0-7908-0115-5

Type

conf

DOI

10.1109/ROCS.2007.4391060

Filename

4391060