Silicon Evanescent Amplifiers

Author

Bowers, John E. ; Park, Hyundai ; Kuo, Ying-hao ; Fang, Alexander W. ; Jones, Richard ; Paniccia, Mario J. ; Cohen, Oded ; Raday, Omri

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA

fYear

2007

fDate

26-31 Aug. 2007

Firstpage

1

Lastpage

2

Abstract

Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; indium compounds; integrated optics; optical fibre amplifiers; quantum well devices; semiconductor devices; semiconductor quantum wells; silicon; wafer bonding; AlGaInAs; chip gain; data amplification; optical amplifiers; photonic integrated circuits; power penalty; quantum wells; silicon evanescent amplifiers; silicon waveguide; wafer bonded structure; Gain; Integrated optics; Optical amplifiers; Optical surface waves; Optical waveguides; Photonic integrated circuits; Semiconductor optical amplifiers; Silicon; Stimulated emission; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on

Conference_Location

Seoul

Print_ISBN

978-1-4244-1173-3

Electronic_ISBN

978-1-4244-1174-0

Type

conf

DOI

10.1109/CLEOPR.2007.4391086

Filename

4391086