• DocumentCode
    2237148
  • Title

    Suppressed soft-errors and highly reduced current for HfOX based unipolar RRAM by inserting AlOX layer

  • Author

    Chen, Yu-Sheng ; Lee, Heng-Yuan ; Chen, Pang-Shiu ; Tsai, Kan-Hsueh ; Wu, Tai-Yuan ; Chen, Wei-Su ; Tsai, Chen-Han ; Gu, Pei-Yi ; Liao, Yi-Ying ; Chen, Frederick ; Lien, Chen-Hsin ; Tsai, Ming-Jinn

  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Compared with the Ni/HfOX device, the Ni/AlOX/HfOX unipolar device exhibits a higher RHIGH and the robust endurance of 10k cycles without any soft-errors. A possible mechanism with filament model is proposed to describe these results. The high operation speed of 40 ns, low operation current possibly down to 10 μA, and stable nonvolatile characteristic at 85 °C in the Ni/AlOX/HfOX device are demonstrated to realize the device to be the next generation nonvolatile memory.
  • Keywords
    aluminium compounds; hafnium compounds; nickel; radiation hardening (electronics); random-access storage; Ni-AlOX-HfOX; current 10 muA; highly reduced current; nonvolatile characteristic; nonvolatile memory; suppressed soft error; temperature 85 C; unipolar RRAM; unipolar device; Hafnium oxide; Nickel; Nonvolatile memory; Resistance; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210100
  • Filename
    6210100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237148