Advanced on-chip polysilicon CMOS analog and driver circuit technology for intelligent discrete devices

Author

Matsudai, Tomoko ; Kojima, Tsutomu ; Nakagawa, Akio

Author_Institution

Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan

fYear

2000

fDate

2000

Firstpage

91

Lastpage

94

Abstract

In this paper, we investigate the analog and driver circuit performances of 0.8 μm gate length polysilicon CMOS fabricated on a thermal oxide film. Especially, we report the capability of load short-circuit protection circuit and high-side driver circuit. For the first time, it is found that the improved polysilicon analog circuits works sufficiently rapidly to protect high voltage power devices. It was experimentally confirmed that a 20 A/600 V high power IGBT can be driven and safely protected from load short-circuit failure by the polysilicon circuits within 200 nsec. It was also shown that a polysilicon high-side driver circuit with a charge pump successfully switched on a 25 A/60 V MOSFET within 130 μsec

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; driver circuits; elemental semiconductors; silicon; 0.8 μm gate length polysilicon CMOS; 0.8 mum; 130 mus; 20 A; 200 ns; 25 A; 60 V; 600 V; MOSFET; Si; advanced on-chip polysilicon CMOS; analog circuit technology; driver circuit technology; high power IGBT; high-side driver circuit; intelligent discrete devices; load short-circuit failure; load short-circuit protection circuit; protect high voltage power devices; thermal oxide film; Analog circuits; CMOS analog integrated circuits; CMOS technology; Driver circuits; Insulated gate bipolar transistors; MOSFET circuits; Protection; Semiconductor films; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856780

Filename

856780