DocumentCode
2238210
Title
A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiation
Author
Hazdra, P. ; Vobecký, J. ; Galster, N. ; Humbel, O. ; Dalibor, T.
Author_Institution
ABB Semicond. AG, Lenzburg, Switzerland
fYear
2000
fDate
2000
Firstpage
123
Lastpage
126
Abstract
A novel approach to lifetime control in fast recovery power diodes, arbitrary axial lifetime profiles by single-step ion irradiation, is presented. The principle is based on irradiation through a single mask which is inserted between the ion source and the device. The density and lateral/axial structures of the mask determine the final lifetime profile. Experimental results show that this new technique is fully capable to replace multiple single-energy ion irradiations and to guarantee superior diode performance
Keywords
carrier lifetime; ion beam effects; power semiconductor diodes; axial lifetime profiles; diode optimization; diode performance; fast recovery power diodes; ion irradiation; lateral/axial structures; lifetime control; Anodes; Charge carriers; Current density; Diodes; Ion sources; Low voltage; Power electronics; Space charge; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856787
Filename
856787
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