DocumentCode
2238635
Title
Degradation Induced Recombination-zone Shift in Mixed-host Organic Light-emitting Device
Author
Tseng, Chin-An ; Hsiao, Chih-Hung ; Lee, Jiun-Haw
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
We investigate the degradation phenomena in a mixed-host organic light-emitting device by using an ultra thin red-emitting dopant as the probe for monitoring the recombination rate in the emitting layer. After the current stressing, the recombination peak shifts toward the hole-transport-layer side and the recombination zone becomes broader.
Keywords
electroluminescent devices; electron-hole recombination; organic light emitting diodes; OLED; degradation induced recombination-zone shift; electroluminescence spectra; emitting layer; hole-transport-layer; mixed-host organic light-emitting device; recombination rate monitoring; ultra thin red-emitting dopant; Active matrix organic light emitting diodes; Flat panel displays; Heterojunctions; Indium tin oxide; Monitoring; Organic light emitting diodes; Organic materials; Plasma measurements; Probes; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391160
Filename
4391160
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