DocumentCode
2239308
Title
Compact Modeling of MOSFETs Channel Noise for Low-Noise RF ICs Design
Author
Lu, Zhi-Qiang ; Lai, Feng-Chang
Author_Institution
Microelectron. Center, Harbin Inst. of Technol.
fYear
2006
fDate
4-7 Dec. 2006
Firstpage
41
Lastpage
44
Abstract
A compact modeling of MOSFETs channel noise is proposed by considering short-channel effects of deep submicron MOSFETs, such as mobility degradation, hot carrier, bulk charge and channel length modulation effects. The model is only dependent on bias, size and technology of MOSFETs, and hence is suitable for low-noise RF ICs design. Noise parameters of MOSFETs are achieved and good agreement between calculated and measured results is demonstrated
Keywords
MOSFET; radiofrequency integrated circuits; semiconductor device models; MOSFET modeling; channel noise; low-noise RFIC design; noise parameters; short-channel effects; CMOS technology; Degradation; Hot carrier effects; MOSFETs; Microelectronics; Noise generators; Predictive models; Radio frequency; Solid modeling; Voltage; MOSFET; channel noise; compact modeling; noise parameters; short-channel effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
Conference_Location
Singapore
Print_ISBN
1-4244-0387-1
Type
conf
DOI
10.1109/APCCAS.2006.342291
Filename
4145327
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