DocumentCode
2239405
Title
Degradation Analysis of 808 nm GaAsP Laser Diodes
Author
Häusler, K. ; Sumpf, B. ; Erbert, G. ; Trankle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
Degradation data from accelerated life test of 808 nm strained GaAsP quantum well lasers are analyzed. The Eyring model and the statistical model of non-linear mixed effects are applied to estimate degradation parameters. The life time at operating condition is predicted at given confidence level.
Keywords
III-V semiconductors; quantum well lasers; statistical analysis; Eyring model; GaAsP; laser diode degradation analysis; nonlinear mixed effect; quantum well laser; statistical model; wavelength 808 nm; Aging; Degradation; Diode lasers; Fiber lasers; Laser modes; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391194
Filename
4391194
Link To Document