• DocumentCode
    2239692
  • Title

    High-density low on-resistance trench MOSFETs employing oxide spacers and self-align technique for DC/DC converter

  • Author

    Kim, Jongdae ; Tae Moon Rob ; Kim, Sang-Gi ; Song, Q. Sang ; Koo, Jin Gun ; Nam, Kee So0 ; Cho, Kyoung-Ik ; Ma, Dong Sung

  • Author_Institution
    Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    A new process technique for fabricating very high-density trench MOSFETs using 4 mask layers with oxide spacers and self-align technique is realized. This technique reduces the process steps, trench width, and source and p-body region with a resulting increase in cell density and current driving capability, and decrease in on-resistance as well as cost-effective production capability. Specific on-resistance of 0.41 mΩ.cm2 with a blocking voltage of 43 is obtained
  • Keywords
    DC-DC power convertors; power MOSFET; DC/DC converter; blocking voltage; cell density; current driving; fabrication; mask layer; on-resistance; oxide spacer; power semiconductor device; self-align technique; trench MOSFET; Anisotropic magnetoresistance; Boron; DC-DC power converters; Etching; Fabrication; Laboratories; MOSFETs; Moon; Ohmic contacts; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856848
  • Filename
    856848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239692