Thermal stress effects on capacitance and current characteristics of Cu/Si and Cu/TiN/Si Schottky-diodes

Author

Ahrens, C. ; Ferretti, R. ; Friese, G. ; Weidner, J.-O.

Author_Institution

Inst. fur Halbleitertechnol. und Werkstoffe der Elektrotech., Hannover Univ., Germany

fYear

1997

fDate

16-19 March 1997

Firstpage

56

Lastpage

58

Abstract

To get insight into thermally induced interface variations in Cu/p-Si and Cu/TiN/p-Si systems, Schottky diodes were fabricated by metal sputtering onto contact windows in SiO/sub 2/ after a thorough cleaning procedure. Patterning of the metal layer was done by wet etching (Cu) or RIE (TiN). For passivation a 50 nm SiO/sub 2/ layer was used. The electrical characteristics of these diodes were carefully investigated including frequency- and temperature dependent capacitance-voltage measurements (capacitance spectroscopy) and temperature dependent current measurements.

Keywords

Schottky diodes; capacitance; copper; silicon; thermal stresses; titanium compounds; Cu-Si; Cu-TiN-Si; Schottky diode; capacitance spectroscopy; current characteristics; thermal stress; Capacitance-voltage characteristics; Cleaning; Contacts; Current measurement; Schottky diodes; Sputtering; Temperature dependence; Temperature measurement; Thermal stresses; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621059

Filename

621059