DocumentCode
2242220
Title
Measurement of spontaneous emission quantum efficiency in InGaAs/GaAs quantum wells
Author
Ding, Ding ; Johnson, Shane R. ; Wang, Jiang-Bo ; Yu, Shui-Qing ; Zhang, Yong-Hang
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
The spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using photoluminescence measurements. The quantum efficiency is inferred from the power law that links pump power and integrated photoluminescence signal.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; spontaneous emission; InGaAs-GaAs; InGaAs/GaAs quantum wells; molecular beam epitaxy; photoluminescence; spontaneous emission quantum efficiency; Electric variables measurement; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Power line communications; Power measurement; Quantum well lasers; Radiative recombination; Spontaneous emission; (230.0250) Optoelectronics; (250.5230) Photoluminescence;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571714
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