• DocumentCode
    2243010
  • Title

    Effect of ion-irradiation-induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide

  • Author

    Jeong, Hoon ; Seo, Se-Young Young ; Shin, Jung H.

  • Author_Institution
    Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-temperature annealing.
  • Keywords
    annealing; ion beam effects; optical films; photoluminescence; Er; Er-doped silicon-rich silicon oxide film; high-temperature annealing; ion-irradiation-induced defect; optically active ions; Annealing; Erbium; Luminescence; Microstructure; Optical films; Optical sensors; Particle beam optics; Semiconductor films; Silicon; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391346
  • Filename
    4391346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2243010