Accurate and Fast Estimation of Junction Band-to-Band Leakage in Nanometer-Scale MOSFET

The estimation and optimization of leakage power become more and more important with technology scalling. Besides subthreshold and gate leakage, the band-to-band (BTBT) junction leakage plays a significant role in total leakage and thus accurate estimation is one of the most important missions in circuit simulation. Today, the current leakage estimating models are still not accurate enough or slow. Shiue et al. (2001) had developed some methods based on extremely empirical models, but these models can not estimate the effect of process variations. On the other side, Kurimoto et al. (1989) had constructed lots of device models to estimate BTBT current, but due to the performance problems, these models could not be applied for circuit simulation directly. In this paper, we propose an accurate and fast model for estimating BTBT leakage, and this model could obtain a result consistent with the simulation result of MEDICI, while the speed of our model is 300X faster. Moreover, this model is physical-based. Hence it is suitable for leakage analysis for large-scale circuits and the effect of process variations can be estimated