DocumentCode
2244670
Title
Extension of quasi-supercontinuum generation in multiple-bandgap semiconductor quantum-dash laser
Author
Tan, C.L. ; Djie, H.S. ; Wang, Y. ; Wang, D.N. ; Hwang, J. C M ; Ooi, B.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We demonstrate a viable approach for ultrabroad-stimulated emission in InAs/InAlGaAs quantum-dash laser. This method involves the integration of multiple diodes with respective bandgaps tuned to different energies along a single laser cavity using postgrowth-intermixing process.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; stimulated emission; supercontinuum generation; InAs-InAlGaAs; multiple diodes; multiple-bandgap; postgrowth-intermixing; quasisupercontinuum generation; semiconductor quantum-dash laser; single laser cavity; ultrabroad-stimulated emission; Atomic force microscopy; Fiber lasers; Laser tuning; Nitrogen; Optical control; Photonic band gap; Semiconductor diodes; Semiconductor lasers; Stimulated emission; Waveguide lasers;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571809
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