Thermal and adhesive properties of Cu interconnect deposited by electroless plating

Author

Kim, J.S.

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Seoul, South Korea

fYear

2001

fDate

2001

Firstpage

182

Lastpage

184

Abstract

In the present study, the adhesion and thermal properties of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu/TaN/Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. Crystallization and agglomeration of the electroless-deposited Cu film occurred through annealing in H₂ atmosphere and resulted in a decrease of film resistance. Thermal stability of Cu/TaN/Si system was maintained up to the annealing temperature of 600°C in H₂ atmosphere above which the intermediate compound of Cu-Si was formed through diffusion into the TaN layer. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than those of sputtered Cu film and evaporated Cu film

Keywords

adhesion; annealing; copper; electroless deposition; electromigration; elemental semiconductors; integrated circuit interconnections; integrated circuit metallisation; silicon; tantalum compounds; thermal stability; 600 degC; Cu-TaN-Si; adhesive properties; agglomeration; annealing; crystallization; deposition methods; diffusion barrier; electroless plating; film resistance; multilayered structure; scratch test; thermal evaporation; thermal properties; thermal stability; Adhesives; Annealing; Atmosphere; Crystallization; MOCVD; Sputtering; Substrates; Temperature; Thermal stability; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2001. EMAP 2001. Advances in

Conference_Location

Jeju Island

Print_ISBN

0-7803-7157-7

Type

conf

DOI

10.1109/EMAP.2001.983980

Filename

983980