• DocumentCode
    2246373
  • Title

    Preparation and characterization of (Bi,La)Ti3O12 thin films for nonvolatile memory

  • Author

    Hwang, Sun Hwan ; Rho, Jun Seo ; Chang, Young Chul ; Chang, Ho Jung

  • Author_Institution
    Dept. of Electron. Eng., Dankook Univ., Chungnam, South Korea
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    188
  • Lastpage
    192
  • Abstract
    Bi3.7La0.75Ti3O12 (BLT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by the sol-gel method. The as-coated films were crystallized by post-annealing at temperatures between 650°C and 750°C for 30 min. The BLT thin films exhibited typical bismuth-layered perovskite structures and the crystalline quality was improved by the post-annealing in air ambient. The AES depth profiles indicated that there were no remarkable interfacial reaction layers between BLT film and lower electrode. The dielectric constant and the dissipation factor of BLT films post-annealed at 750°C were about 402 and 0.04 at 5 kHz, respectively. The leakage current density of the BLT films annealed at 650°C was found to be 5×10-7 A/cm2 at 3 V. The BLT film annealed at 650°C exhibited ferroelectric properties with a remanent polarization 2Pr (Pr+-Pr- ) of 32.5 μ C/cm2 and showed no degradation after 10 10 polarization switching cycles under ±5 V bipolar pulse, indicating good fatigue properties
  • Keywords
    Auger electron spectra; annealing; bismuth compounds; dielectric polarisation; ferroelectric storage; ferroelectric thin films; integrated memory circuits; lanthanum compounds; permittivity; sol-gel processing; (Bi,La)Ti3O12 ferroelectric thin films; 3 V; 30 min; 5 V; 5 kHz; 650 to 750 C; AES depth profiles; Auger electron spectra; BLT thin films; Bi3.7La0.75Ti3O12 -Pt-Ti-SiO2-Si; Bi3.7La0.75Ti3O12 ferroelectric thin films; NVFeRAM; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrates; ambient air post-annealing; as-coated film crystallization; bipolar pulses; bismuth-layered perovskite structures; crystalline quality; dielectric constant; dissipation factor; fatigue properties; ferroelectric properties; film characterization; film preparation; interfacial reaction layers; leakage current density; lower electrode; nonvolatile ferroelectric random access memories; nonvolatile memory; polarization switching cycles; post-annealing temperature; remanent polarization; sol-gel method; Annealing; Bismuth; Crystallization; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Polarization; Semiconductor thin films; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Materials and Packaging, 2001. EMAP 2001. Advances in
  • Conference_Location
    Jeju Island
  • Print_ISBN
    0-7803-7157-7
  • Type

    conf

  • DOI
    10.1109/EMAP.2001.983982
  • Filename
    983982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2246373