Process simulation high performance bipolar and BiCMOS devices

Author

Plummer, J.D. ; Griffin, P.B. ; Huang, R.

Author_Institution

Integrated Circuits Lab., Stanford Univ., CA, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

299

Lastpage

306

Abstract

SUPREM IV, an advanced 2-D process simulator based on the latest physical models for silicon process physics, is presented. It is designed to interface directly with 2-D device simulators like PISCES to produce accurate predictions of device structural and electrical characteristics. SUPREM IV, the point defect diffusion models on which it is based, and its application to high-performance bipolar and BiCMOS process and device design are described. In particular, SUPREM IV simulations are compared with a 2-μm BiCMOS test process. The process technology is sketched, and the simulation results are presented and discussed

Keywords

BIMOS integrated circuits; bipolar integrated circuits; digital simulation; integrated circuit technology; semiconductor device models; 2-D process simulator; BiCMOS process; PISCES; SUPREM IV; Si process physics; high-performance bipolar; physical models; point defect diffusion models; process technology; BiCMOS integrated circuits; Circuit simulation; Computational modeling; Data mining; Electric variables measurement; Impurities; Laboratories; Oxidation; Predictive models; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69513

Filename

69513