Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots

Author

Chen, Shen-De ; Tsai, Chiou-Yun ; Lee, Si-Chen

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2002

fDate

2002

Firstpage

341

Lastpage

342

Abstract

The mechanisms responsible for the shift of the photoluminescence spectrum to longer wavelength by depositing an InGaAs cap layer on InAs/GaAs quantum dots are studied in detail. It is demonstrated that the phase separation growth of InAs and GaAs rather than the stress in the InAs quantum dots is the main reason for the wavelength shifts. AFM images of a single InAs quantum dot are presented and the reason for the differences between AFM and SEM images is discussed.

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; phase separation; photoluminescence; scanning electron microscopy; self-assembly; semiconductor growth; semiconductor quantum dots; spectral line shift; AFM image; InAs-GaAs; InAs/GaAs quantum dots; InGaAs; InGaAs cap layer; PL spectra shift; phase separation growth; photoluminescence spectra; self-assembly; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Quantum dots; Scanning electron microscopy; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

Print_ISBN

0-7803-7538-6

Type

conf

DOI

10.1109/NANO.2002.1032260

Filename

1032260