DocumentCode
2247528
Title
CMOS design challenges to power wall
Author
Kuroda, T.
Author_Institution
Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
6
Lastpage
7
Abstract
CMOS power dissipation has been increasing due to the increase in power density. The power dissipation increased fourfold every three years until the early 1990´s, due to a constant voltage scaling. Recently, a constant field scaling has been applied to reduce power dissipation, where the power density is increased proportional to the 0.7th power of scaling factor, resulting in power increase by twice every 6.5 years. It is considered that the power dissipation of CMOS chips will steadily be increased as a natural result of device scaling. Technology scaling will become difficult due to the power wall. On the other hand, future computer and communications technology will require further reduction in power dissipation. Since no new energy efficient device technology is on the horizon, low power CMOS design should be challenged. This paper discusses what and how much designers can do for CMOS power reduction.
Keywords
CMOS integrated circuits; capacitance; integrated circuit design; low-power electronics; CMOS power dissipation; constant field scaling; constant voltage scaling; low power CMOS design; power wall; scaling factor; technology scaling; CMOS technology; Circuits; Degradation; Flip-flops; MPEG 4 Standard; Parasitic capacitance; Power dissipation; Random access memory; Semiconductor device measurement; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984030
Filename
984030
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