A Compact Equivalent Circuit Model of HVLDMOS and Application in HIVC Design

Author

Gao, Shan ; Chen, Junning ; Ke, Daoming ; Wu, Xiulong

Author_Institution

Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

1465

Lastpage

1468

Abstract

In this paper, a novel equivalent circuit of high voltage LDMOS is presented, which can be embedded into SPICE and applied in high voltage integrated circuits design. Compared with the conventional circuit models of LDMOS, this model does not divide the on-state region of LDMOS into a linear region and a saturation region. Consequently, the formulas for the circuit model contain fewer parameters easily extracted. This paper first creates an I-V equation which is not only available in the on-state region but also suitable to the sub-threshold region based on numerical simulation, and then we obtain a very simple equivalent circuit. The method of parameters extraction in the model is also offered in details. In the end we give an application of designing a CMOS inverter and verify it by MEDICI

Keywords

CMOS integrated circuits; equivalent circuits; integrated circuit design; invertors; power MOSFET; power integrated circuits; semiconductor device models; CMOS inverter; HIVC design; MEDICI; SPICE; compact equivalent circuit model; current-voltage equation; high voltage LDMOS; high voltage integrated circuits; linear region; numerical simulation; on-state region; parameters extraction; saturation region; subthreshold region; Circuit simulation; Electric variables; Equations; Equivalent circuits; Immune system; Integrated circuit modeling; Medical simulation; Numerical simulation; SPICE; Voltage; HVLDMOSt; equivalent circuit; linear region; parameter extraction; saturation region;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342498

Filename

4145679