Development of 3-D focused-ion-beam (FIB) etching methods for nano- and micro-technology application

Author

Kim, S.-J. ; Yamashita, T. ; Lee, K.-Y. ; Nagao, M. ; Sato, M. ; Maeda, H.

Author_Institution

NICHE, Tohoku Univ., Sendai, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

34

Lastpage

35

Abstract

We have developed a 3-D FIB etching method for making 3-D micro-devices and sensors based on nano- and micro-technology. We fabricated single electron tunneling (SET) devices on a Bi-2201 single crystal whisker. We also describe 3-D FIB etching methods using layered single crystal whiskers as examples. These methods offer simple in situ etching and evaporation processes in FIB systems for making a micro area of stacks.

Keywords

focused ion beam technology; micromechanical devices; microsensors; nanotechnology; single electron transistors; sputter etching; superconducting junction devices; whiskers (crystal); 3-D FIB etching methods; Bi-2201 single crystal whisker; Bi/sub 2/Sr/sub 2/CuO/sub 6/; MEMS; SET; W(CO)/sub 6/ films; focused-ion-beam etching; gate electrode; in situ etching; layered single crystal whiskers; microsensors; microtechnology; nanotechnology; scanning ion microscopy; single electron tunneling device; ultra-small tunnel junction; whisker thickness; Electrodes; Electrons; Etching; Fabrication; Focusing; Ion beams; Mechanical sensors; Micromotors; Sensor systems; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984055

Filename

984055