Rigorous simulation of line-defects in EUV masks

Summary form only given. We use rigorous electromagnetic simulation to investigate the behaviour of EUV defective masks. Using the Fourier modal method, the geometry of the structure as well as the polarisation state can be handled (in 2D in the current version of the code). The speed of our simulation allows us to make an evaluation of the problem of the defects without making too restrictive hypotheses (for example, on the number of layers or on the layer geometry). A very simple analytical model has been developed in order to generate the input geometry for the simulations. The deposition conditions can be mimicked by changing an empirical parameter representing the planarisation properties of the process.