DocumentCode
2249748
Title
Thin layer resist imaging for EUVL
Author
Ryoo, M. ; Shirayone, S. ; Yano, E. ; Okazaki, S.
Author_Institution
ASET, NTT Syst. Electron. Labs., Kanagawa, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
128
Lastpage
129
Abstract
In this article, we show the imaging results and the lithographic properties of commercially available DUV-based single-layer and bilayer resists exposed to EUV radiation. The selected resists were UV-3 and UV-113 (Shipley) for single-layer experiments and EUV008S (TOK) for bilayers. All exposures were conducted with the ASET 20X EUV micro-stepper.
Keywords
photoresists; ultraviolet lithography; ASET 20X EUV micro-stepper; DUV-based bilayer resists; DUV-based single-layer resists; EUV lithography; EUV radiation exposure; EUV008S; UV-113; UV-3; critical dimensions; imaging results; line edge roughness; lithographic properties; thin layer resist imaging; Chemicals; Laboratories; Lithography; Organic materials; Resists; Solid modeling; Thickness measurement; Ultraviolet sources; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984122
Filename
984122
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