Epitaxial GaAs MESFETs for high linearity, high efficiency wireless applications

Author

Schirmann, E. ; Baeten, R. ; Costa, J. ; Green, D.L. ; Halchin, D. ; Martinez, M.J. ; Reyes, A.

Author_Institution

Commun. Products Lab., Motorola Inc., Tempe, AZ, USA

fYear

1997

fDate

23-26 Feb. 1997

Firstpage

29

Lastpage

32

Abstract

Epitaxial GaAs MESFETs with exceptionally low distortion and simultaneously high efficiency have been manufactured for use in linear power amplifier modules. When tuned for linearity, 15 mm devices exhibit Psat>34.5 dBm and PAE>68% at Vds=5.8 V and 835 MHz (single tone). With two tone average Pout=30 dBm, these devices exhibit PAE>48%, IM/sub 3/<-35 dBc, and IM/sub 5/<-45 dBc.

Keywords

III-V semiconductors; UHF power amplifiers; cellular radio; digital radio; epitaxial growth; gallium arsenide; modules; power amplifiers; 5.8 V; 835 MHz; GaAs; III-V semiconductors; cellular radio; digital radio; epitaxial MESFET; high efficiency wireless applications; high linearity wireless applications; linear power amplifier modules; low distortion; Dielectrics; Etching; Fabrication; Fixtures; Gallium arsenide; Linearity; MESFETs; Packaging; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Applications Digest, 1997., IEEE MTT-S Symposium on Technologies for

Conference_Location

Vancouver, BC, Canada

Print_ISBN

0-7803-3318-7

Type

conf

DOI

10.1109/MTTTWA.1997.595105

Filename

595105