Investigation of chemical interactions on the interface W/Si(100) during the deposition of W thin films by various techniques

Author

Pluscheva, S.V. ; Shabelinikov, L.G. ; Malikov, I.V. ; Andreeva, A.V.

Author_Institution

Inst. of Problem of Microelectron. Technol. & High Purity Mater., Acad. of Sci., Chernogolovka, Russia

fYear

1997

fDate

16-19 March 1997

Firstpage

178

Lastpage

179

Abstract

The interaction processes on W/Si(100) interface when obtaining the W films by means of CVD from a tungsten hexa-fluoride-hydrogen mixture with different ways of activation of reaction products were studied. The influence of thermal treatment on film composition, electrical resistivity, and internal deformations was analysed. Comparative investigation of the CVD-processes in a low pressure reactor by two methods: 1) thermal CVD (activation energy of process 16.8 kkal/mole); 2) plasma-enhanced CVD (activation energy is 3.8 kkal/mole) was carried out.

Keywords

chemical vapour deposition; electrical resistivity; internal stresses; metallic thin films; plasma CVD; semiconductor-metal boundaries; tungsten; W thin film deposition; W-Si; W/Si(100) interface chemistry; activation energy; composition; electrical resistivity; internal deformation; low pressure reactor; plasma-enhanced CVD; thermal CVD; thermal treatment; Annealing; Chemical vapor deposition; Hydrogen; Inorganic materials; Materials science and technology; Plasma temperature; Plasma x-ray sources; Semiconductor films; Silicides; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621109

Filename

621109