Study on radiation-induced reaction in microscopic region for basic understanding of electron beam patterning in lithographic process (II) relation between resist space resolution and space distribution of ionic species

Author

Saeki, A. ; Kozawa, T. ; Yoshida, Y. ; Tagawa, S.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

234

Lastpage

235

Abstract

The time dependent behavior of cation radical in n-dodecane was observed by pulse radiolysis, and analyzed by Monte Carlo simulation. By transforming the decay curve to the distribution distance between cation radical and electron, the time evolution of distribution was obtained. In nano-lithography of EB, since a large part of the reactions are initiated by ionization of resist base resin, the distribution of cation radical and electrons has an influence on resolution of patterning and line edge roughness.

Keywords

Monte Carlo methods; electron resists; nanotechnology; radiolysis; Monte Carlo simulation; cation radical; decay curve; distribution distance; electron beam patterning; line edge roughness; lithographic process; microscopic region; n-dodecane; nanolithography; pulse radiolysis; radiation-induced reaction; resist base resin; resist space resolution; space distribution; time dependent behavior; time evolution; Electron beams; Electron microscopy; Ionization; Lithography; Optical materials; Probes; Resins; Resists; Scattering; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984176

Filename

984176