Ultrafast carrier dynamics in semiconductor nanowires

Author

Prasankumar, R.P. ; Choi, S.G. ; Wang, G.T. ; Picraux, S.T. ; Taylor, A.J.

Author_Institution

Center for Integrated Nanotechnol., Los Alamos Nat. Lab., Los Alamos, NM

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Ultrafast wavelength-tunable optical measurements on semiconductor nanowires allow us to independently probe the dynamics of electrons, holes, and defect states. These investigations reveal the influence of two-dimensional confinement on carrier dynamics in these nanosystems.

Keywords

III-V semiconductors; annealing; carrier relaxation time; defect states; gallium compounds; high-speed optical techniques; nanowires; semiconductor quantum wires; time resolved spectra; wide band gap semiconductors; GaN; annealing; carrier relaxation; defect states; electron dynamics; hole dynamics; semiconductor nanowires; time-resolved measurements; two-dimensional confinement; ultrafast carrier dynamics; ultrafast optical spectroscopy; ultrafast wavelength-tunable optical measurements; Annealing; Gallium nitride; Luminescence; Nanowires; Optical pumping; Probes; Spontaneous emission; Substrates; Ultrafast optics; Wavelength measurement; (320.7120) Ultrafast phenomena; (320.7130) Ultrafast processes in condensed matter;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572085