A 5 GHz fully integrated VCO in a SiGe bipolar technology

Author

Kyranas, Aristides ; Papananos, Yunnis

Author_Institution

Microelectron. Circuit Design Group, Nat. Tech. Univ. of Athens, Greece

Volume

5

fYear

2000

fDate

2000

Firstpage

193

Abstract

A fully integrated voltage controlled oscillator operating at 5 GHz is presented. The circuit is designed in a SiGe bipolar technology employing three metal layers. The design is based on a fully integrated LC tank using square spiral inductors. The simulated phase noise is -101.4 dBc/Hz at 100 kHz offset. The effect of bias current on phase noise is also examined. It is shown that an optimum bias current exists, that minimizes phase noise in bipolar cross-coupled differential pair VCOs

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; integrated circuit noise; microwave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; 5 GHz; LC tank; SiGe; SiGe bipolar circuit; bias current; cross-coupled differential pair; fully integrated VCO; phase noise; square spiral inductor; voltage controlled oscillator; Frequency; Germanium silicon alloys; Inductors; Integrated circuit technology; Phase noise; Q factor; Silicon germanium; Spirals; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.857396

Filename

857396