DocumentCode
2251267
Title
Some electronic properties of single crystalline NiSi
Author
Meyer, B. ; Gottlieb, U. ; Laborde, O. ; Yang, J.S. ; Lasjaunias, J.C. ; Sulpice, A. ; Madar, R.
Author_Institution
Lab. des Mater et du Genie Phys., INPG, Saint Martin d´´Heres, France
fYear
1997
fDate
16-19 March 1997
Firstpage
180
Abstract
NiSi is a promising material for applications in Si microelectronics. A good understanding of its fundamental physical properties is however necessary. We present here resistivity, Hall effect, low temperature specific heat and magnetic measurements of high quality single crystals.
Keywords
Hall effect; electrical resistivity; nickel alloys; silicon alloys; specific heat; Hall effect; NiSi; electronic properties; magnetic measurement; resistivity; single crystalline NiSi; specific heat; Conductivity; Crystalline materials; Crystallization; Crystals; Hall effect; Magnetic materials; Magnetic variables measurement; Microelectronics; Nickel; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621110
Filename
621110
Link To Document