Fabrication of single crystal silicon field emitter array on glass substrate

We have demonstrated the fabrication and field emission characteristics of field emitter arrays using direct bonding between single-crystal silicon-emitter tips prepared by anodization and another silicon substrate. For application to display devices, it is necessary to fabricate tip arrays on transparent substrates. In this report, we demonstrate the fabrication of the silicon field emitter array on a glass substrate using anodization and anodic bonding. The anodic bonding is carried out at temperatures less than 300 °C. The anodic bonding process conditions and the field emission characteristics of field emitter are reported.