DocumentCode
2251635
Title
RF-MEMS from DC to Millimeter-wave
Author
Nishino, Tamotsu ; Miyazaki, Moriyasu ; Yoshida, Yukihisa ; Taguchi, Motohisa
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura
fYear
2006
fDate
16-19 May 2006
Firstpage
297
Lastpage
300
Abstract
We have developed a hollow cavity structure and two types of RF-MEMS switches. The one has less parasitic capacitance to be used in high frequency band with the hollow structure. The other has compact structure with a common bias electrode to a signal line. This type suits for the cellular phone frequencies. In this paper, we introduce both of the switches, and discuss on the future applications of the RF-MEMS
Keywords
cavity resonators; microswitches; microwave switches; millimetre wave devices; RF-MEMS switches; bias electrode; cellular phone frequencies; direct contact; millimeter-wave; Biomembranes; Coplanar waveguides; Electrodes; Millimeter wave technology; Parasitic capacitance; Radio frequency; Radiofrequency microelectromechanical systems; Research and development; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
Conference_Location
Malaga
Print_ISBN
1-4244-0087-2
Type
conf
DOI
10.1109/MELCON.2006.1653097
Filename
1653097
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