DocumentCode
2251756
Title
Characterization of Silicon Avalanche Photodetectors Fabricated in Standard CMOS process
Author
Kang, Hyo-Soon ; Lee, Myung-Jae ; Choi, Woo-Young
Author_Institution
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 mum standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.
Keywords
CMOS integrated circuits; avalanche breakdown; photodetectors; silicon; Si; avalanche breakdown voltage; inductive components; photodetection frequency response; silicon avalanche photodetectors; size 0.18 mum; standard CMOS process; Avalanche breakdown; Breakdown voltage; CMOS process; Frequency response; Impedance; Optical receivers; Photodetectors; Resonance; Silicon; Virtual reality;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391724
Filename
4391724
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