DocumentCode
2252097
Title
The influence of ambient temperature on femtosecond laser ablation of semiconductor and metal
Author
Yahng, J.S. ; Nam, J.R. ; Yoon, T.O. ; Jeoung, S.C.
Author_Institution
Div. of Adv. Technol., Korea Res. Inst. of Stand. & Sci., Daejeon
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
Ultrafast laser ablation of silicon and metal was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent decrease in ablation threshold and surface roughness at a high substrate temperature.
Keywords
elemental semiconductors; high-speed optical techniques; laser ablation; silicon; stainless steel; surface roughness; ablation efficiency; ambient temperature; femtosecond laser ablation; surface roughness; Laser ablation; Optical surface waves; Pulsed laser deposition; Rough surfaces; Semiconductor lasers; Silicon; Surface emitting lasers; Surface morphology; Temperature; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391737
Filename
4391737
Link To Document