• DocumentCode
    2252196
  • Title

    A 0.05mm2 0.6V 500kS/s 14.3fJ/conversion-step 11-bit two-step switching SAR ADC for 3-dimensional stacking CMOS imager

  • Author

    Jin-Yi Lin ; Hsin-Yuan Huang ; Chih-Cheng Hsieh ; Hung-i Chen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    12-14 Nov. 2012
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    This paper proposes a two-step switching SAR ADC architecture that greatly reduces the area and power consumption of the DAC network. The total number of unit capacitors of the proposed approach is only 64C. In addition, to reduce meta-stability at low-supply operation, a supply-boost technique of comparator is also employed. The prototype chip realized an 11-bit SAR ADC in a 0.18μm CMOS technology with an extremely small core area of 0.05mm2. With a single 0.6V supply voltage, the prototype consumes 5.02uW at 500kS/s, and achieves an ENOB of 9.45bit and a FoM of 14.34fJ/conversion-step, respectively.
  • Keywords
    CMOS image sensors; analogue-digital conversion; comparators (circuits); 3-dimensional stacking CMOS imager; CMOS technology; DAC network; area reduction; comparator supply-boost technique; meta-stability reduction; power 5.02 muW; power consumption reduction; size 0.18 mum; two-step switching SAR ADC architecture; unit capacitors; voltage 0.6 V;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian
  • Conference_Location
    Kobe
  • Type

    conf

  • DOI
    10.1109/IPEC.2012.6522651
  • Filename
    6522651