Modal gain and time-resolved photoluminescence of Ga(NAsP) heterostructures pseudomorphically grown on silicon (001) substrate

Author

Koukourakis, Nektarios ; Funke, Dominic A. ; Gerhardt, Nils C. ; Hofmann, Martin R. ; Kunert, B. ; Liebich, S. ; Trusheim, D. ; Zimprich, M. ; Bückers, C. ; Koch, S.W. ; Volz, K. ; Stolz, W.

Author_Institution

Photonics & Terahertz Technol., Ruhr-Univ. Bochum, Bochum, Germany

fYear

2011

fDate

1-6 May 2011

Firstpage

1

Lastpage

2

Abstract

We present room-temperature gain (up to 80 cm^-1) and time-resolved photoluminescence measurements in Ga(NAsP) grown lattice-matched on silicon substrate. We find a strong impact of the barrier-growth conditions on the optical quality of the material.

Keywords

III-V semiconductors; MOCVD; arsenic compounds; gallium compounds; nitrogen compounds; optical materials; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; time resolved spectra; vapour phase epitaxial growth; Ga(NAsP); Si; barrier-growth conditions; metal-organic vapour-phase epitaxy; multiple quantum-well structures; optical quality; pseudomorphically grown heterostructures; silicon (001) substrate; temperature 293 K to 298 K; time-resolved photoluminescence; Integrated optics; Optical pumping; Optical variables measurement; Silicon; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2011 Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4577-1223-4

Type

conf

Filename

5951120