Passively mode-locked 832-nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3-ps pulses at 1.9-GHz repetition rate

Author

Wilcox, Keith G. ; Mihoubi, Zakaria ; Elsmere, Stephen P. ; Quarterman, Adrian H. ; Foreman, Hannah D. ; Tropper, Anne

Author_Institution

Sch. of Phys. & Astron., Southampton Univ., Southampton

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

The authors report the first passively mode-locked 830- nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.

Keywords

laser mode locking; optical pulse generation; optical saturable absorption; semiconductor lasers; surface emitting lasers; carrier recovery time; frequency 1.9 GHz; optical pulse generation; passive mode locking; semiconductor saturable absorber mirror; surface recombination; time 15.3 ps; vertical-external-cavity surface-emitting semiconductor laser; wavelength 832 nm; Autocorrelation; Laser mode locking; Mirrors; Optical pulse shaping; Optical pulses; Optical pumping; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.4050) Mode-locked lasers; (140.5960) Semiconductor lasers; (140.7270) Vertical emitting lasers;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572271