Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study

Author

Ossaimee, Mahmoud I. ; El-Sabagh, Mona ; Selim, Dalia ; Gamal, Salah H.

Author_Institution

Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt

fYear

2010

fDate

19-22 Dec. 2010

Firstpage

300

Lastpage

302

Abstract

Electron mobility in gated silicon nanowires is calculated using a Monte Carlo simulation that considers phonon and surface roughness scattering. Surface roughness scattering rates are calculated using Ando´s model. The eigenenergies and eigenfunctions required for scattering rate calculation are determined by self-consistent solution of the Schrödinger and Poisson equations. The effects of size quantization and transverse electric field on electron mobility are presented and discussed.

Keywords

Monte Carlo methods; Poisson equation; Schrodinger equation; eigenvalues and eigenfunctions; electron mobility; elemental semiconductors; nanowires; phonons; semiconductor quantum wires; silicon; surface roughness; surface scattering; Ando model; Monte Carlo simulation; Poisson equation; Schrodinger equation; Si; eigenenergies; eigenfunctions; electron mobility; gate all around cylindrical silicon nanowires; phonon scattering; size quantization; surface roughness scattering; transverse electric field; Logic gates; Nanowires; Rough surfaces; Scattering; Silicon; Surface roughness; Wire; Mobility; Monte Carlo simulation; silicon nanowire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2010 International Conference on

Conference_Location

Cairo

Print_ISBN

978-1-61284-149-6

Type

conf

DOI

10.1109/ICM.2010.5696144

Filename

5696144