DocumentCode
2256812
Title
Distortion properties of gallium arsenide and silicon RF and microwave switches
Author
Caverly, R.H.
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., North Dartmouth, MA, USA
fYear
1997
fDate
23-26 Feb. 1997
Firstpage
153
Lastpage
156
Abstract
An important parameter for RF and microwave system design is the prediction of distortion produced by system components. This paper presents the results of a study on the distortion produced by GaAs and Si RF and microwave switches. The results presented will provide RF and microwave circuit designers with information needed to help decide which switch to use for a specific switching application.
Keywords
III-V semiconductors; electric distortion; elemental semiconductors; field effect transistor switches; gallium arsenide; microwave diodes; p-i-n diodes; power semiconductor diodes; power semiconductor switches; silicon; GaAs; GaAs switches; RF switches; Si; Si switches; circuit designers; distortion; microwave switches; system components; Charge carrier lifetime; Communication switching; Diodes; Gallium arsenide; Impedance; Nonlinear distortion; Radio frequency; Silicon; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Applications Digest, 1997., IEEE MTT-S Symposium on Technologies for
Conference_Location
Vancouver, BC, Canada
Print_ISBN
0-7803-3318-7
Type
conf
DOI
10.1109/MTTTWA.1997.595132
Filename
595132
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