Electron transport within resonant tunneling diodes with staggered-bandgap heterostructures

Author

Gelmont, Boris ; Woolard, Dwight ; Zhang, Weidong ; Globus, Tatiana

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

fYear

2001

fDate

2001

Firstpage

256

Lastpage

259

Abstract

The electron transport physics within the conduction-band of resonant tunneling diodes with staggered-bandgap structure is analyzed. Here, the current-voltage characteristic for AlGaSb/InAs/AlGaSb double-barrier tunneling diodes is calculated in the framework of the six-band Kane model. This work demonstrates that the conduction-band electron transport is extremely dependent on the coupling between the conduction and valence bands and that an accurate estimate of current density requires the application of a multi-band model. In addition, the application of a multi-band model yields results that are in excellent agreement with existing experimental measurements on staggered-bandgap structures when well know material parameters are utilized

Keywords

III-V semiconductors; aluminium compounds; conduction bands; current density; energy gap; gallium compounds; indium compounds; resonant tunnelling diodes; semiconductor device models; semiconductor heterojunctions; valence bands; AlGaSb-InAs-AlGaSb; AlGaSb/InAs/AlGaSb double-barrier tunneling diodes; conduction-band; conduction-valence band coupling; current density; current-voltage characteristic; electron transport; multi-band model; resonant tunneling diodes; six-band Kane model; staggered-bandgap heterostructures; Current density; Current-voltage characteristics; Electrons; Feedback; Laboratories; Oscillators; Photonic band gap; Physics; Resonant tunneling devices; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984489

Filename

984489