Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks

Author

Triplett, G. ; May, G. ; Brown, A.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2001

fDate

2001

Firstpage

264

Lastpage

265

Abstract

Statistical experimental design was used to explore the effects of the HEMT channel growth parameters on device performance. A 2² full-factorial central composite circumscribed Box-Wilson design with three center points was implemented. The growth parameters under investigation were the channel growth temperature and interface formation, both of which greatly impact device operation. Interface formation was defined as the method used to form the InAs/AlSb interface

Keywords

III-V semiconductors; aluminium compounds; design of experiments; electron mobility; high electron mobility transistors; indium compounds; neural nets; semiconductor device models; 2² full-factorial central composite circumscribed Box-Wilson design; HEMT; HEMT channel growth parameters; InAs-AlSb; MBE-grown InAs/AlSb thin films; center points; channel growth temperature; electron mobility; interface formation; neural networks; statistical experimental design; Application software; Electron mobility; HEMTs; Indium; Molecular beam epitaxial growth; Neural networks; Personal communication networks; Signal analysis; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984491

Filename

984491