A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation

Author

Nawaz, Muhammad ; Permthamassin, Komet ; Zaring, Carina ; Willander, Magnus

Author_Institution

Ericsson Microelectron. AB, Stockholm, Sweden

fYear

2001

fDate

2001

Firstpage

289

Lastpage

292

Abstract

Using self-consistent two dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAs/GaAs, GaInAs/GaInAsP active region suffers from larger spread in the threshold current due to nonuniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths

Keywords

III-V semiconductors; SCF calculations; carrier density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; 980 nm; GaInP-GaInAs-GaAs; GaInP/GaInAs/GaAs based 980 nm Al-free pump laser; carrier density; cavity lengths; increasing quantum wells; layer structure; ridge waveguide structure; self-consistent numerical simulation; threshold current; waveguide thicknesses; well numbers; Erbium-doped fiber lasers; Gallium arsenide; Laser excitation; Laser theory; Optical computing; Optical materials; Pump lasers; Quantum well lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984497

Filename

984497