Heterogeneous integration of MEMS sensor array and CMOS readout IC with Through Silicon Via interconnects

Author

Qian Wang ; Siyi Xie ; Tao Wang ; Jian Cai ; Ziyu Liu ; Dong Wu ; Mengyun Yue ; Zheyao Wang ; Shuidi Wang ; Songliang Jia

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2012

fDate

10-12 Dec. 2012

Firstpage

1

Lastpage

5

Abstract

Through Silicon Via (TSV) forms electrical feedthrough and makes it possible to vertically stack chips with various functions which including logic, memory, analog and MEMS etc. This paper presents a TSV 3D- heterogeneous integration structure of MEMS sensor array with CMOS readout IC (ROIC) and its fabrication technology. Surface micromaching of sensor array are co-designed with TSV fabrication processes to enable TSVs for electrical signals output from backside in sensor chip, sensor chip and its corresponding ROIC chip are vertically stacked, and chip to chip interconnection is achieved by Cu/Sn-Cu microbump bonding. The stacked structure are then assembled to relized MEMS-CMOS 3D heterogeneous integration. Overall, the present work describes an approach for high density MEMS integration.

Keywords

CMOS integrated circuits; copper; integrated circuit interconnections; micromachining; microsensors; readout electronics; sensor arrays; three-dimensional integrated circuits; tin compounds; CMOS readout IC; Cu-SnCu; MEMS sensor array; MEMS-CMOS 3D heterogeneous integration; ROIC chip; TSV 3D- heterogeneous integration structure; TSV fabrication process; chip to chip interconnection; electrical feedthrough; electrical signal output; fabrication technology; high density MEMS integration; microbump bonding; sensor chip; stacked structure; surface micromachining; through silicon via interconnects; vertically stack chip;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan, 2012 2nd IEEE

Conference_Location

Kyoto

Print_ISBN

978-1-4673-2654-4

Type

conf

DOI

10.1109/ICSJ.2012.6523398

Filename

6523398